| 摘要 |
PROBLEM TO BE SOLVED: To manufacture a highly integrated peripheral circuitry region and decrease an interconnection resistance by using a clad structured interconnection in a memory cell region without a process of the peripheral circuitry region complexed. SOLUTION: The memory cell region 6 and the peripheral circuitry region 8 are mounted on the identical semiconductor element substrate 10 of a magnetic storage device 1. The memory cell region has a first interconnection 11, a second interconnection 12 three-dimensionally crossing the first interconnection 11, and a magnetoresistive effect storage memory element 13 for storing and reproducing information of a magnetic spin at a crossing region of the first interconnection 11 and the second interconnection 12. Only within the memory cell region, a magnetic substance layer 51 comprising a high magnetic permeability layer is formed on the both sides of the first interconnection 11 and on the side opposite to the side facing to the memory element 13, and also on the opposite side of the second interconnection 12 and facing the both sides of the second interconnection 12 and the memory element 13. COPYRIGHT: (C)2005,JPO&NCIPI
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