METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To improve manufacturing yield of semiconductor device by preventing fluctuation in the threshold voltage. SOLUTION: After formation of an element isolation region (S2) and a p-type well (S3) in a semiconductor substrate (S3), a gate insulating film is formed on the surface of the p-type well (S4). Thereafter, thickness of the gate insulating film is measured (S5) and a gate electrode is formed on the gate insulating film (S6). The ion implantation is performed under the condition selected in accordance with deviation of the measured film thickness of the gate insulating film from the design thickness in order to adjust impurity concentration of the p-type well (S7). The condition for ion implantation is selected to compensate for deviation of the threshold voltage due to the deviation of the gate insulating film thickness from the design thickness. COPYRIGHT: (C)2005,JPO&NCIPI