| 摘要 |
<P>PROBLEM TO BE SOLVED: To reduce a decrease in element performance due to hot carrier deterioration. Ž<P>SOLUTION: A CMOS inverter 10 has both or one of a first circuit portion including a main n-channel MOS 52 and a second circuit portion including a main p-channel MOS 54. The first circuit portion has one or more sub n-channel MOSs 14 which are connected to the main n-channel MOS electrically in parallel and equal in gain coefficient to the main n-channel MOS, and increase in threshold voltage in steps, and the second circuit portion has one or more sub p-channel MOSs 18 which are connected to the main p-channel MOS electrically in parallel and equal in gain coefficient to the main p-channel MOS, and increase in threshold voltage in steps. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
