| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device having a separation structure for which the influence of a divot is suppressed, and the method for manufacturing. Ž<P>SOLUTION: In an element isolation region B, the trench 2 of a prescribed depth is formed. On the bottom surface and sidewall surface of the trench 2, a liner film 4 comprising a silicon nitride film is formed. On the liner film 4, a silicon oxide film 7 is formed so as to fill the trench 2 to the middle of the depth. A barrier film 6 comprising the silicon nitride film is formed from the opening end of the trench 2 through the liner film 4 on the sidewall of the trench 2 to the silicon oxide film 7 so as to cover the films. On the surface of the barrier film 6, a silicon oxide film 9 is formed so as to finally fill the trench 2. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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