| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a light-emitting device using an active layer having a multiple quantum well. <P>SOLUTION: The semiconductor light emitting device which has an n-type layer, a p-type layer, and a light-emitting active layer arranged between the p-type layer and the n-type layer and having alternating regions of doped and undoped materials is manufactured. <P>COPYRIGHT: (C)2010,JPO&INPIT |
