| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of a silicon single crystal, by which excellent production efficiency is achieved in pulling a silicon single crystal having a large diameter and the crystal quality is made stable. SOLUTION: The production method of a silicon single crystal comprises melting a silicon raw material in a quartz crucible initially charged with the raw material at a charging rate of 40 to 60%, additionally charging the crucible with the silicon raw material to satisfy a target charge amount, and pulling a single crystal from the melt formed in the quartz crucible, wherein preferably, the crucible is additionally charged with the silicon raw material at least twice until satisfying the target charge amount. Thereby, the volume of the quartz crucible used is effectively used, the dissolving time of the silicon raw material supplied in the initial charging is decreased, and a damaged part of the liquid surface is newly formed. This method is optimal upon pulling a silicon single crystal having a diameter of 450 mm by using a quartz crucible in a size of 36 inches (914 mm) to 44 inches (1,118 mm). COPYRIGHT: (C)2010,JPO&INPIT
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