| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride semiconductor light emitting element having improved light extraction efficiency by improving planarity of an interface between a p-type nitride semiconductor layer and a p-side electrode. <P>SOLUTION: In this manufacturing method of the nitride semiconductor light emitting element, at least an n-type nitride semiconductor layer 102, an active layer 103 and the p-type nitride semiconductor layer 104 are grown in this order over a substrate 101. The manufacturing method includes a process for making a surfactant material contact to the surface of the p-type nitride semiconductor layer before the p-side electrode 105 is grown, or contact to the surface of the p-side electrode in the middle of growing the p-side electrode. It is desirable that a surface energy of the surfactant material is smaller than that of the p-type nitride semiconductor layer and/or p-type electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT |
