发明名称 MULTI-CHAMBER SYSTEM HAVING COMPACT INSTALLATION SET-UP FOR AN ETCHING FACILITY FOR SEMICONDUCTOR DEVICE MANUFACTURING
摘要 A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a clean room by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.
申请公布号 US2009291558(A1) 申请公布日期 2009.11.26
申请号 US20090512106 申请日期 2009.07.30
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM KI-SANG;JEOUNG GYU-CHAN;KWAG GYU-HWAN
分类号 H01L21/302;H01L21/465;B65G1/00;H01L21/00;H01L21/306;H01L21/3065;H01L21/677 主分类号 H01L21/302
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