| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where inconvenience such as a crack of a solder bump due to a void is prevented and reliability as the device can be improved by reducing influence of the void having possibility to generate or grow the crack, in a vicinity of a bonding interface between the solder bump and a re-wiring layer, and to provide electronic equipment having the semiconductor device and a manufacturing method of the semiconductor device. SOLUTION: In WLCSP, an insulating resin post 33 is formed on a surface of a semiconductor wafer 1. A recess 34 whose height D is not less than 50% of height H of the resin post 33 is formed on the upper face of the resin post 33. The first re-wiring layer 38 is formed on the recess 34. The solder bump 36 is formed on the first re-wiring layer 38. COPYRIGHT: (C)2006,JPO&NCIPI
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