| 摘要 |
<p>A monolithic optoelectronic semiconductor body has a semiconductor layer sequence (600) divided into mutually insulated partial segments (691, 692), each with an electromagnetic radiation generating active layer (615); and at least three contact pads. Two conductor planes (660, 670) contact a first segment and first pad and a second segment and second pad respectively, and a third conductor plane (650) joins the segments together and contacts the third pad. A monolithic optoelectronic semiconductor body has a semiconductor layer sequence (600) divided into at least two mutually insulated partial segments (691, 692), each including an electromagnetic radiation (EMR) generating active layer (615); and at least three electrical contact pads. First and second conductor planes (660, 670) contact a first segment and first pad (661) and a second segment and second pad (671) respectively, and a third conductor plane (650) joins the segments together (to generate EMR) and contacts the third pad (651). The three planes are adjacent to a second main side, opposite to the first main side from which generated EMR is emitted. An independent claim is included for the production of the semiconductor body, by: (A) epitaxially growing the semiconductor layer sequence (600), including the active layer, on a substrate; (B) defining the mutually insulated partial segments (691, 692), for emitting EMR in the direction of a first main side; (C) forming the first and second conductor planes (660, 670), both on the opposite side of the sequence from the first side and respectively contacting the active layers of the first and second partial segments; (D) forming at least one third conductor plane, on the opposite side of the sequence from the first side and contacting the active layers of the two partial segments to couple the segments in series; and (E) forming the first, second and third contact pads (661, 671, 651), connected to the first, second and third conductor planes respectively.</p> |
