发明名称 |
CIGS THIN FILM FABRICATING METHOD AND OPTICAL ABSORBER LAYER FABRICATED USING THE SAME |
摘要 |
<p>PURPOSE: A CIGS thin film fabricating method and an optical absorber layer fabricated using the same are provided to improve the performance of the CIGS thin film by manufacturing the CIGS film through an electrophoresis. CONSTITUTION: A CIGS thin film fabricating method and an optical absorber layer fabricated using the same are comprised of the steps: manufacturing a mixed solution by mixing a copper material precursor, an indium raw material precursor, a gallium material precursor, and a selenium raw material precursor with water or a buffer solution; dipping a working electrode and an opposite electrode to the working electrode into a mixed solution; and applying a voltage to a potentiostat and making CIGS film electroplated on the working electrode.</p> |
申请公布号 |
KR20090121660(A) |
申请公布日期 |
2009.11.26 |
申请号 |
KR20080047673 |
申请日期 |
2008.05.22 |
申请人 |
SUNGKYUNKWAN UNIVERSITY FOUNDATION FOR CORPORATE COLLABORATION |
发明人 |
JUNG, DUK YOUNG;JEONG, SOON CHEOL;CHANG, JU YEON |
分类号 |
H01L31/0445;H01L31/18 |
主分类号 |
H01L31/0445 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|