发明名称 Multi-band, inductor re-use low noise amplifier
摘要 Described herein are multi-band LNAs that reuse inductors for different frequency bands to minimize chip area. In an embodiment, a multi-band LNA is capable of operating in a narrowband (NB) and a wideband (WB) while reusing at least one input impedance matching inductor and at least one load inductor for both bands. The reuse of inductors results in a more efficient use of chip area. In an exemplary embodiment, the LNA comprises a common source transistor and a common gate transistor. In this embodiment, the LNA operates in a common source configuration using the common source transistor to amplify input signals in the NB, and operates in a common gate configuration using the common gate transistor to amplify input signals in the WB. The LNA reuses an input impedance matching inductor and a load inductor in both configurations, and thus both bands.
申请公布号 US7622989(B2) 申请公布日期 2009.11.24
申请号 US20080107266 申请日期 2008.04.22
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA 发明人 TZENG FRED;JAHANIAN AMIN;HEYDARI PAYAM
分类号 H03F3/68 主分类号 H03F3/68
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