发明名称 Semiconductor dynamic quantity sensor
摘要 When movable electrodes of beam arrangement structures are displaced in a direction perpendicular to the surface of a support substrate in first and second capacitance constituent portions by action of an acceleration while carrier voltages are applied, the difference between a first capacitance and second capacitance is output from the support substrate through a third capacitance constituent portion. Under self-diagnosis, the voltage applying counter electrode portion of the self-diagnosis fixed capacitance constituent portion is set to a first potential, and a signal output counter electrode portion of the third capacitance constituent portion is set to a second potential different from the first potential, whereby the potential of the support substrate corresponding to the fixed electrode in the first and second capacitance constituent portions is forcedly changed.
申请公布号 US7622781(B2) 申请公布日期 2009.11.24
申请号 US20050137435 申请日期 2005.05.26
申请人 DENSO CORPORATION 发明人 SAKAI MINEKAZU
分类号 G01P21/00;H01L29/82;B81B7/02;G01P15/125;H01L29/84 主分类号 G01P21/00
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