| 摘要 |
A snapback device functions as a semiconductor protection circuit to prevent damage to integrated circuits due to events such as electrostatic discharge and the like. The snapback device is capable of carrying considerable current at a reduced voltage once it snaps back into bipolar operation mode after its trigger point is achieved. The snapback device includes the advantage of a low breakdown voltage which enables the snapback device to snap back into bipolar mode before damage is done to active circuit components due to their breakdown voltages being exceeded. The snapback device includes n+ active areas formed within a p-well substrate region and each active area includes a polysilicon film overlapping the active area but insulated therefrom by a dielectric film. Each n+ active area and polysilicon film are coupled by a conductive film and the components combine to form one electric node. One electric node of the snapback device is coupled to I/O terminals of the device and the other is coupled to ground or a power supply.
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