发明名称 MAGNETRON SPUTTERING SYSTEM AND THIN FILM PRODUCTION METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a magnetron sputtering system and a thin film production method where, when an LaB<SB>6</SB>thin film is deposited by sputtering, the single crystal properties in the wide region domain direction of the obtained LaB<SB>6</SB>thin film is improved. Ž<P>SOLUTION: A target 11 is applied with high frequency power from a high frequency power source 193 and first d.c. power as a result of cutting a high frequency component from a first d.c. power source 194, and a substrate holder 13 is applied with d.c. power from a second d.c. source 21 during the application of the high frequency power and the first d.c. power. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009270158(A) 申请公布日期 2009.11.19
申请号 JP20080121837 申请日期 2008.05.08
申请人 CANON ANELVA CORP 发明人 NAKAMURA NOBORU;KURIBAYASHI MASAKI
分类号 C23C14/06;C23C14/34 主分类号 C23C14/06
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