发明名称 METHOD OF FORMING A PHASE CHANGEABLE STRUCTURE
摘要 The present invention relates to a method of forming a phase changeable structure wherein an upper electrode is formed on a phase changeable layer. A material including fluorine can be provided to the phase changeable layer and the upper electrode. The phase changeable layer can be etched to form a phase changeable pattern. Oxygen plasma or water vapor plasma can then be provided to the upper electrode and the phase changeable pattern.
申请公布号 US2009283741(A1) 申请公布日期 2009.11.19
申请号 US20090509048 申请日期 2009.07.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM YOUNG-SOO;BAE JUN-SOO
分类号 H01L47/00 主分类号 H01L47/00
代理机构 代理人
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