发明名称 ELECTROLYTIC PLATING METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
摘要 A disclosed electrolytic plating method includes a first step of immersing a substrate in electrolytic plating liquid including copper salt to form a first Cu layer on the substrate; and a second step of forming a second Cu layer over the first Cu layer. The first step is continued for ten seconds or less after the immersion. In the first step, the substrate is rotated at a first speed N (rpm) which satisfies DxNxn<=6000xpi (mm/min), where D is the diameter of the substrate (mm), and DxNxpi represents the peripheral speed of the substrate, and a current is supplied to the substrate at a first density of 10 mA/cm2 or less. In the second step, the substrate is rotated at a second speed higher than the first speed, and the current is supplied to the substrate at a second density higher than the first density.
申请公布号 US2009283413(A1) 申请公布日期 2009.11.19
申请号 US20090361936 申请日期 2009.01.29
申请人 FUJITSU MICROELECTRONICS LIMITED 发明人 SATO MOTONOBU
分类号 C25D5/10;C25D5/48 主分类号 C25D5/10
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