发明名称 |
Semiconductor Device and Method of Forming High Voltage SOI Lateral Double Diffused MOSFET with Shallow Trench Insulator |
摘要 |
A semiconductor device has a buried oxide layer formed over a substrate. An active silicon layer is formed over the buried oxide layer. A drain region is formed in the active silicon layer. An LDD drift region is formed in the active silicon layer adjacent to the drain region. The drift region has a graded doping distribution. A co-implant region is formed in the active silicon. A source region is formed in the co-implant region. A shallow trench insulator is formed along a top surface of the LDD drift region. The shallow trench isolator has a length less than the LDD drift region. The shallow trench insulator terminates under the polysilicon gate and within the LDD drift region. A polysilicon gate is formed above the active silicon layer between the source region and LDD drift region and at least partially overlapping the shallow trench insulator.
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申请公布号 |
US2009283826(A1) |
申请公布日期 |
2009.11.19 |
申请号 |
US20090467157 |
申请日期 |
2009.05.15 |
申请人 |
GREAT WALL SEMICONDUCTOR CORPORATION |
发明人 |
SHEA PATRICK M.;ANDERSON SAMUEL J.;OKADA DAVID N. |
分类号 |
H01L29/78;H01L21/336 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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