| 摘要 |
Systems and methods fabricate a vertically stacked multi-chip semiconductor device assembly. An exemplary assembly is fabricated by forming a first semiconductor device in a first semiconductor device layer with a first connector located at a first surface of the first semiconductor device layer; forming a second semiconductor device in a second semiconductor device layer with a second connector located at an interior surface of the second semiconductor device layer; forming a via in the first semiconductor device layer extending from the first surface to an opposing second surface of the first semiconductor device layer corresponding to the location of the second connector; and joining the second surface of the first semiconductor device layer and the interior surface of the second semiconductor device layer, wherein the via at the second surface of the first semiconductor device layer is coupled to the second connector of the second semiconductor device. |
