| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor luminous element with high luminance which can remarkably suppress the generation of voids on a bonding interface, and to provide a method of manufacturing the same. <P>SOLUTION: The semiconductor luminous element includes: a supporting structure having an Si supporting substrate 20 and a supporting substrate-side bonding layer 22 of which base material is made of Au; a semiconductor lamination structure section 15 including a luminous layer 5 emitting light with a specified wavelength; and a luminous structure which is provided with a reflection metal layer 10 for reflecting light from the luminous layer 5 and a luminous structure side bonding layer 12 that is provided on the side of the supporting structure of the reflection metal layer 10 and of which base material bonded to the supporting substrate side bonding layer 22 is made of Au. The supporting substrate-side bonding layer 22 and the luminous structure-side bonding layer 12 are bonded to form a bonding metal layer 14, and a diffusion adjusting layer 21 is provided between the Si supporting substrate 20 and the supporting substrate-side bonding layer 22 so as to adjust the diffusion of Si to the supporting substrate-side bonding layer 22 from the Si supporting substrate 20, and then a diffusion barrier layer 11 is provided between the luminous structure side bonding layer 12 and the reflection metal layer 10 so as to suppress the diffusion of Si to the reflection metal layer 10. <P>COPYRIGHT: (C)2010,JPO&INPIT |
