| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that is improved in throughput. SOLUTION: A first semiconductor pattern 13e covered with a first insulating film 15 is formed over a first active region 7, a second semiconductor pattern 13a is formed over a second active region 3, and a second insulating film 25 is formed over the first insulating film 15, and first and second semiconductor patterns 13a and 13e. The second insulating film 25 and first insulating film 15 are etched to form an opening which is deep enough to reach the first semiconductor pattern 13e, the second insulating film 25 is patterned to form a sidewall on a side surface of the second semiconductor pattern 13a, and a metal film 31 is formed on the first and second semiconductor patterns 13a and 13e respectively and made to react with the first and second semiconductor patterns 13a and 13e, thereby forming silicide layers 31a and 31e. COPYRIGHT: (C)2010,JPO&INPIT
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