| 摘要 |
A method for manufacturing a semiconductor device is provided to improve high voltage capacity and a breakdown voltage during an STI forming process through a corner rounding process tuning condition. A pad oxide layer(303) and a nitride layer(305) are sequentially deposited on a semiconductor substrate(301) to form a multiple pad. A photoresist pattern(307) for defining an STI region is formed over the nitride layer. A wet etching process is performed on the pad oxide layer with 0.49 % HF during 500 seconds by using the photoresist pattern as a barrier layer, and on the nitride with H3PO4 during 330 seconds, so that the pad oxide layer and the nitride are selectively removed to form an STI pattern. The semiconductor substrate exposed by the STI pattern used as a mask is wet-etched to form an STI. A liner oxide layer is deposited on the semiconductor substrate including the STI and the entire surfaces of the pad oxide layer and the nitride layer.
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