| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate treatment method capable of activating implanted impurities and preventing the impurities-implanted layer from being lifted, and to provide a substrate-treating device. SOLUTION: A semiconductor wafer implanted with impurities is loaded into a chamber. After oxygen gas is introduced around the semiconductor wafer, the semiconductor wafer is irradiated with a flash of light from flash lamps for an irradiation time of ≥0.1 milliseconds and ≤100 milliseconds, to thereby momentarily raise the surface temperature of the semiconductor wafer up to ≥800°C and ≤1,300°C. Since the temperature rises in an extremely short time, it is possible to activate the impurities while suppressing thermal diffusion thereof. Further, since an extremely thin oxide film is formed on a surface of the semiconductor wafer, this film serves as a protective film in a subsequent cleaning process, to prevent lifting of the impurities-implanted layer. COPYRIGHT: (C)2010,JPO&INPIT
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