发明名称 METHOD FOR MANUFACTURING BONDED SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method for manufacturing a bonded substrate having a favorable thin film over an entire substrate surface, especially even in the vicinity of a bonded end. SOLUTION: The method for manufacturing the bonded substrate includes, at least a step to form an ion implanted layer by implanting hydrogen ions or rare gas ions or both types of the ions to a surface of a first substrate being a semiconductor substrate, a step to execute surface activation treatment on at least one of the first substrate ion-implanted surface and a bonding surface of a second substrate, a bonding step to bond the first substrate ion-implanted surface and the bonding surface of the second substrate at an atmosphere of humidity 30% or lower and/or water content 6 g/m<SP>3</SP>or smaller, and an exfoliating step to transform the first substrate into a thin film by removing the first substrate at the ion-implanted layer, thus manufacturing the bonded substrate having the thin film on the second substrate. COPYRIGHT: (C)2010,JPO&amp;INPIT
申请公布号 JP2009272619(A) 申请公布日期 2009.11.19
申请号 JP20090095765 申请日期 2009.04.10
申请人 SHIN ETSU CHEM CO LTD 发明人 TOBISAKA YUUJI;KUBOTA YOSHIHIRO;ITO ATSUO;TANAKA KOICHI;KAWAI MAKOTO;AKIYAMA SHOJI;TAMURA HIROSHI
分类号 H01L21/02;H01L27/12 主分类号 H01L21/02
代理机构 代理人
主权项
地址