| 摘要 |
PROBLEM TO BE SOLVED: To provide a resistance change memory device for stabilizing the resistance state transition of a memory cell autonomously by a simple circuit. SOLUTION: The resistance change memory device includes a memory cell MC configured by serially connecting a variable resistance element whose resistance state is reversibly changed by voltage or current application and a diode, and state transition stabilizing transistors MP and MN serially connected to the current path of the memory cell to stabilize the resistance state transition of the memory cell by an operation point movement due to the resistance state transition. COPYRIGHT: (C)2010,JPO&INPIT |
