| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus that improves the in-plane uniformity of a workpiece in an inductively coupled plasma processing. SOLUTION: The plasma processing apparatus includes a chamber 10' for housing a wafer W, a dielectric bell jar disposed at upper portion in the chamber 10' so as to communicate with the chamber 10', a plasma generating section having a coil winded around the outer circumferential portion of the bell jar, a mechanism for introducing a plasma generating gas into a processing space, a stage 21 provided in the chamber 10' to support the wafer W, and a dielectric mask plate (mask) 170 placed on the stage to support the wafer thereon, wherein the mask plate 170 is configured as the height of the wafer support region (a first region) 170a for supporting a wafer thereon, and the height of the circumferential region (a second region) 170b surrounding the wafer support region 170a are the same. COPYRIGHT: (C)2010,JPO&INPIT |
