| 摘要 |
<p>A wafer having patterns of various sizes is provided to reduce process developing cost like material cost, equipment cost, and etc. by forming patterns with different depths and widths on one wafer. An etch stop layer(20) is deposited on a wafer(10). A stepped insulation layer is formed on the etch stop layer by a CVD method. A photoresist film is deposited on the stepped insulation layer. The photoresist film is exposed and developed to form a photoresist pattern with various widths. The insulation layer is etched by using the photoresist pattern as an etch mask.</p> |
