| 摘要 |
<p>PURPOSE: A manufacturing method of a thin film transistor is provided to increase an aperture ratio by reducing a part dimension of a thin film transistor. CONSTITUTION: A substrate(30) is provided. A first metal layer(32) including a gate, a semiconductor layer(34), and a second metal layer are successively formed on the substrate. A first photoresist layer is formed on the second metal layer through a first mask. A part of the first photoresist layer is positioned on the first metal layer. A second photoresist layer is formed on the second metal layer through a second mask. A source(52) and a drain(54) are formed by removing the first photoresist layer and the second photoresist layer in order to expose the second metal layer.</p> |
