| 摘要 |
<p>A plasma processing apparatus is provided to control temperature of an edge part of a wafer easily. A plasma processing apparatus(1) loads a substrate on a loading board(11) in a processing chamber(10), and performs plasma processing of the substrate by making a processing gas supplied in the processing chamber into plasma. The loading board comprises a body(12) and an electrostatic chuck(13) for absorbing the substrate arranged on the top of the body. A first heat transfer gas diffusion region and a second heat transfer gas diffusion region are formed on the top of the electrostatic chuck. A first heat transfer gas supply part and a second heat transfer gas supply part supply a heat transfer gas to the first and the second heat transfer gas diffusion region.</p> |
