发明名称 |
Method for manufacturing a transistor with metal source and drain |
摘要 |
<p>The method involves depositing a metallic layer (132) covering lateral flanks of a channel on walls of holes, and siliconizing the flanks. Another metallic layer forming a source and a drain of a MOS transistor (100) with the siliconized portion of the flanks is deposited on the layer (132). The latter layer is mechano-chemically planarized with stop on a hard mask (118). A titanium, titanium nitride or tungsten based layer is deposited on the layer (132) after deposition of the layer (132). An oxide layer is deposited on the latter layer after deposition of the latter layer.</p> |
申请公布号 |
EP2120258(A1) |
申请公布日期 |
2009.11.18 |
申请号 |
EP20090159902 |
申请日期 |
2009.05.11 |
申请人 |
COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
VINET, MAUD;POIROUX, THIERRY;PREVITALI, BERNARD |
分类号 |
H01L21/336;H01L29/417;H01L29/51;H01L29/78;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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