发明名称 HIGH VOLTAGE GENERATION CIRCUIT AND FLASH MEMORY DEVICE INCLUDING THE SAME
摘要 PURPOSE: A high voltage generating circuit and a flash memory device including the same capable of controlling voltage level are provided to increase efficiency without additional work. CONSTITUTION: A high voltage generating circuit(70) includes a high voltage detection unit(110), an oscillator, a pumping clock control unit, and a charge pump. The high voltage detection unit provides the comparison signal and compares the high voltage applied with the memory cell array with the reference voltage. The pumping signal control unit provides the clock control signal for changing the frequency of the clock signal in response to the comparison signal. The oscillator produces the clock signal in which the frequency changes according to the clock control signal.
申请公布号 KR20090118594(A) 申请公布日期 2009.11.18
申请号 KR20080044478 申请日期 2008.05.14
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON, HONG SOO
分类号 G11C16/30;G11C5/14;G11C16/32 主分类号 G11C16/30
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