Semiconductor device structures for bipolar junction transistors and methods of fabricating such structures

摘要

Semiconductor device structures for use with bipolar junction transistors and methods of fabricating such semiconductor device structures. The semiconductor device structure comprises a semiconductor body having a top surface and sidewalls extending from the top surface to an insulating layer, a first region including a first semiconductor material with a first conductivity type, and a second region including a second semiconductor material with a second conductivity type. The first and second regions each extend across the top surface and the sidewalls of the semiconductor body. The device structure further comprises a junction defined between the first and second regions and extending across the top surface and the sidewalls of the semiconductor body.