发明名称 |
Photomask blank, photomask and method for producing those |
摘要 |
A metal film is provided as a light shielding layer on one principle surface of a photomask substrate. The metal film cannot be substantially etched by chlorine-based dry etching containing oxygen ((Cl+O)-based dry etching) and can be etched by chlorine-based dry etching not containing oxygen (Cl-based dry etching) and fluorine-based dry etching (F-based dry etching). On the light shielding layer, a metal compound film as an antireflective layer. The metal compound film cannot be substantially etched by chlorine-based dry etching not containing oxygen (Cl based) and can be etched by at least one of chlorine-based dry etching containing oxygen ((Cl+O) based) and fluorine-based dry etching (F based).
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申请公布号 |
US7618753(B2) |
申请公布日期 |
2009.11.17 |
申请号 |
US20050662479 |
申请日期 |
2005.08.10 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD.;TOPPAN PRINTING CO., LTD. |
发明人 |
YOSHIKAWA HIROKI;INAZUKI YUKIO;KINASE YOSHINORI;OKAZAKI SATOSHI;HARAGUCHI TAKASHI;IWAKATA MASAHIDE;TAKAGI MIKIO;FUKUSHIMA YUICHI;SAGA TADASHI |
分类号 |
C23F4/00;G03F1/48;G03F1/50;G03F1/54;H01L21/027 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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