发明名称 |
Process for forming an electronic device including discontinuous storage elements |
摘要 |
A process for forming an electronic device can include forming a trench within a substrate, wherein the trench includes a wall and a bottom. The process can also include including forming a portion of discontinuous storage elements that lie within the trench, and forming a first gate electrode within the trench after forming the discontinuous storage elements. At least one discontinuous storage element lies along the wall of the trench at an elevation between an upper surface of the first gate electrode and a primary surface of the substrate. The process can also include forming a second gate electrode overlying the first gate electrode and the primary surface of the substrate.
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申请公布号 |
US7619275(B2) |
申请公布日期 |
2009.11.17 |
申请号 |
US20050188935 |
申请日期 |
2005.07.25 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
SADD MICHAEL A.;CHANG KO-MIN;CHINDALORE GOWRISHANKAR L.;HONG CHEONG M.;SWIFT CRAIG T. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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