发明名称 LOW POWER FLOATING BODY MEMORY CELL BASED ON LOW BANDGAP MATERIAL QUANTUM WELL
摘要 Embodiments of the invention relate to apparatus, system and method for use of a memory cell having improved power consumption characteristics, using a low-bandgap material quantum well structure together with a floating body cell.
申请公布号 US2009279355(A1) 申请公布日期 2009.11.12
申请号 US20080119234 申请日期 2008.05.12
申请人 INTEL CORPORATION 发明人 RAKSHIT TITASH;DEWEY GILBERT;PILLARISETTY RAVI
分类号 G11C11/34;G11C16/04 主分类号 G11C11/34
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