发明名称 COLLOIDAL SILICA FOR POLISHING SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING THE SAME
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a colloidal silica useful for polishing electronic materials etc. <P>SOLUTION: The colloidal silica is manufactured by using: an active silicic acid water solution obtained by hydrolysis of tetraalkoxysilane; and at least one nitrogen-containing basic compound out of ethylenediamine, diethylenediamine, imidazole, methylimidazole, piperidine, morpholine, arginine, and hydrazine. The colloidal silica contains nonspherical silica particles, and has a pH of 8.5-11.0 at 25°C. The nonspherical silica particle is preferably a nonspherical heteromorphic particle-crowded silica particle whose major axis/minor axis ratio observed by transmission electron microscope is 1.2-20, and whose average value of major axis/minor axis ratio is 3-15. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2009263484(A) 申请公布日期 2009.11.12
申请号 JP20080114065 申请日期 2008.04.24
申请人 NIPPON CHEM IND CO LTD;SPEEDFAM CO LTD 发明人 NAKAJO MASARU;SAITO YUKIMI;OKUBO KUNIO;MAEJIMA KUNIAKI;TANAKA HIROAKI
分类号 C09K3/14;B24B37/00;B82Y10/00;B82Y30/00;B82Y99/00;C01B33/151;H01L21/304 主分类号 C09K3/14
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