| 主权项 |
1. A nitride semiconductor light-emitting diode comprising:
a non-polar or semi-polar p-type nitride semiconductor layer; a non-polar or semi-polar active layer; a non-polar or semi-polar n-type nitride semiconductor layer; a p-side electrode; and an n-side electrode, wherein: the active layer is interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer, the p-type nitride semiconductor layer and the n-type nitride semiconductor layer are electrically connected to the p-side electrode and the n-side electrode, respectively, the nitride semiconductor light-emitting diode has a shape of a triangle in a top view thereof, and has a shape of a rectangle in a side view thereof, the nitride semiconductor light-emitting diode has a shape of a triangle composed of Side BC, Side CA, and Side AB having a length of La, a length of Lb, and a length of Lc, respectively, in a top view of the nitride semiconductor light-emitting diode, angles opposite to Side BC, Side CA, and Side AB have Angle degree α, Angle degree β, and Angle degree γ, respectively, in the triangle, Angle degree θ is formed between a c-axis and a longitudinal direction of Side BC in the top view, the length Lb is equal to the length Lc, and either Group Aa consisting of the following two mathematical formulae (Ia) and (IIa) or Group Ab consisting of the following two mathematical formulae (Ib) and (IIb) is satisfied,
20 degrees≦Angle degree α≦40 degrees (Ia) and 0 degrees≦Angle degree θ≦40 degrees (IIa), and Group Aa:90 degrees≦Angle degree α≦130 degrees (Ib) and 50 degrees≦Angle degree θ≦90 degrees (IIb). Group Ab: |
