| 摘要 |
PURPOSE: A capacitor of a semiconductor device and a manufacturing method thereof are provided to form a bottom electrode with the maximum capacitance by forming the density of the bottom electrode in a single area maximally by minimizing a gap between adjacent bottom electrodes. CONSTITUTION: A first insulation layer(108) is formed on a semiconductor substrate(102) with a first contact plug and a second contact plug(106). A first contact hole to expose the first contact plug is formed on the first insulation layer. A first filling layer is formed on the first contact hole. A second insulation layer(112) is formed on the first insulation layer with the first filling layer. A second contact hole is formed by etching the second insulation layer. A third contact hole is formed by etching the first and second insulation layers. A second filling layer and a third filling layer are formed in the second and third contact holes respectively. A third insulation layer(116) is formed on the second insulation layer with the second and third filling layers. A fourth contact hole is formed by etching the third insulation layer. A fifth contact hole is formed to expose the third filing layer and the second insulation layer. The first to third filing layers are removed. A conductive layer is formed in the inner surface of the first to fourth contact holes.
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