发明名称 |
INTEGRATED SOLID STATE MICROWAVE POWER GENERATION MODULES |
摘要 |
An embodiment of a microwave power generation module includes an amplifier arrangement, an impedance matching element, and a resonant element. The amplifier arrangement includes a transistor with a transistor input and a transistor output. The impedance matching element is formed from a planar conductive structure. The planar conductive structure has a proximal end and a distal end, and the proximal end is electrically coupled to the transistor output. The resonant element has a proximal end electrically coupled to the distal end of the planar conductive structure, and the resonant element is configured to radiate electromagnetic energy having a microwave frequency in a range of 800 megahertz (MHz) to 300 gigahertz (GHz). A combination of the impedance matching element and the resonant element is configured to perform an impedance transformation between an impedance of the transistor and an impedance of an air cavity. |
申请公布号 |
US2016198530(A1) |
申请公布日期 |
2016.07.07 |
申请号 |
US201314912124 |
申请日期 |
2013.08.29 |
申请人 |
PIEL Pierre Marie;LESTER David P.;MONGIN Lionel |
发明人 |
Piel Pierre Marie;Lester David P.;Mongin Lionel |
分类号 |
H05B6/66;H05B6/68 |
主分类号 |
H05B6/66 |
代理机构 |
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代理人 |
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主权项 |
1. A microwave power generation module comprising:
an amplifier arrangement that includes a transistor with a transistor input and a transistor output; an impedance matching element formed from a first planar conductive structure, wherein the first planar conductive structure has a proximal end and a distal end, and wherein the proximal end is electrically coupled to the transistor output; and a resonant element, wherein the resonant element has a proximal end electrically coupled to the distal end of the first planar conductive structure, and the resonant element is configured to radiate electromagnetic energy having a microwave frequency in a range of 800 megahertz (MHz) to 300 gigahertz (GHz), and wherein a combination of the impedance matching element and the resonant element is configured to perform a first impedance transformation between an impedance of the transistor and an impedance of an air cavity. |
地址 |
Chandler AZ US |