| 摘要 |
The performances of a semiconductor device are improved. In a method for manufacturing a semiconductor device, in a memory cell region, a control gate electrode formed of a first conductive film is formed over the main surface of a semiconductor substrate. Then, an insulation film and a second conductive film are formed in such a manner as to cover the control gate electrode, and the second conductive film is etched back. As a result, the second conductive film is left over the sidewall of the control gate electrode via the insulation film, thereby to form a memory gate electrode. Then, in a peripheral circuit region, a p type well is formed in the main surface of the semiconductor substrate. A third conductive film is formed over the p type well. Then, a gate electrode formed of the third conductive film is formed. |
