| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve the remanent polarization characteristic than ever before by controlling the orientation direction of a ferroelectric film in a ferroelectric element including a ferroelectric capacitor. Ž<P>SOLUTION: A first insulation film 11 having irregularities formed in a stripe geometry is formed in an upper part of a substrate 10, and a base insulation film 12 having tapered portions 12a is formed thereon by HDPCVD method. A Pt film which is self-oriented such that a direction perpendicular to the top face of the base insulation film may be a (111) direction is formed on the base insulation film 12 and is flattened to form a first conductive film 14a. Then, a PZT film is formed as a ferroelectric film 15 thereon and a top electrode 16 is formed thereon. The PZT film is oriented in the same direction as the first conductive film 14a, so that the (001) directions, which are a polarization axis, are aligned in a direction of connecting the top and bottom electrodes (a direction of field application). By this arrangement, an amount of remanent polarization per unit area of the ferroelectric film 15 is increased and thereby the remanent polarization characteristics of the ferroelectric element is improved. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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