An integrated device including a sensor and the like formed on a gamma-alumina layer epitaxially grown on a silicon substrate is provided at low cost. This integrated device includes: a silicon substrate; a first function area formed on a gamma-alumina film epitaxially grown on a portion of the silicon substrate; a second function area formed on an area of the silicon substrate other than an area where the gamma-alumina film is grown; and wiring means for connecting the first function area with the second function area.
