Semiconductor Devices Including Active Patterns Having Different Pitches and Methods of Fabricating the Same

摘要

Methods for fabricating semiconductor devices are provided including sequentially stacking hardmask layers, a first sacrificial layer, and a second sacrificial layer on a substrate, forming first mandrels on the first sacrificial layer by etching the second sacrificial layer, forming first spacers on side walls of the first mandrels, forming a photoresist pattern disposed outside a region from which the first mandrels have been removed, forming second and third mandrels by etching the first sacrificial layer using the first spacers and the photoresist pattern as respective etching masks, forming second and third spacers on side walls of the second and third mandrels, forming first and second active patterns respectively having first and second pitches by etching the hardmask layer and at least a portion of the substrate, and forming a device isolation layer so that upper portions of the first and second active patterns protrude therefrom.

主权项

1. A method of fabricating a semiconductor device, comprising:
sequentially stacking hardmask layers, a first sacrificial layer, and a second sacrificial layer on a substrate; etching the second sacrificial layer to form first mandrels on the first sacrificial layer; forming first spacers on side walls of the first mandrels; forming a photoresist pattern disposed outside a region from which the first mandrels have been removed, spaced apart from the first spacers, and having a line width greater than a line width of the first spacers; etching the first sacrificial layer using the first spacers and the photoresist pattern as respective etching masks to form second mandrels and a third mandrel, respectively; forming second spacers on side walls of the second mandrels and third spacers on side walls of the third mandrel; forming first active patterns having a first pitch and second active patterns having a second pitch greater than the first pitch, by etching the hardmask layer and at least a portion of the substrate using the second and third spacers as respective etching masks; and forming a device isolation layer so that upper portions of the first active patterns and the second active patterns protrude therefrom.