| 摘要 |
PROBLEM TO BE SOLVED: To provide a memory device which performs multi-level recording for a phase change memory device. SOLUTION: In the memory device, a memory cell is constituted by the phase change memory device 10 including a phase change layer 5 made of phase transition materials of which the resistivity is varied by variation of the phase, two electrode layers 3, 4 each connected to this phase change layer 5, and a heater layer 6 made of conductive materials or resistance materials and connected to the phase change layer 5, and in a process in which the phase transition material of the phase change layer 5 changes in phase from an amorphous phase to a single crystal phase, a resistance value of the phase change memory device 10 of the memory cell can be varied by three stages or more by varying a current pulse or a voltage pulse supplied to the memory cell. COPYRIGHT: (C)2010,JPO&INPIT |
