| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of forming a silicon film formable of an excellent high-crystallinity silicon film without heat treatment at high temperature. Ž<P>SOLUTION: A silicon film is formed by preparing a liquid including a polysilane-modified silicon fine wire (S101), forming a coating film on a substrate with the liquid including the polysilane-modified silicon fine wire (S102), and heating the coating film (S103). Thereby, silicon crystallization in the coating film is accelerated without heat treatment at high temperature. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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