| 发明名称 |
THIN FILM CAPACITOR |
| 摘要 |
A thin film capacitor comprises a base material, a dielectric layer provided on the base material, and an upper electrode layer provided on the dielectric layer. The dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystal has a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3. |
| 申请公布号 |
US2016217931(A1) |
申请公布日期 |
2016.07.28 |
| 申请号 |
US201615006366 |
申请日期 |
2016.01.26 |
| 申请人 |
TDK CORPORATION |
发明人 |
SAITA Hitoshi;INOUE Hiroyasu;YANO Yoshihiko |
| 分类号 |
H01G4/33;H01G4/10;H01G4/12;H01G4/012 |
主分类号 |
H01G4/33 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A thin film capacitor comprising: a base material; a dielectric layer provided on the base material; and an upper electrode layer provided on the dielectric layer, wherein
the dielectric layer includes a plurality of columnar crystals that extend along a normal direction with respect to a surface of the upper electrode layer, the columnar crystals have a perovskite crystal structure represented by AyBO3, an element A is at least one of Ba, Ca, Sr, and Pb, an element B is at least one of Ti, Zr, Sn, and Hf, y≦0.995 is satisfied, and the dielectric layer contains 0.05 to 2.5 mol of Al per 100 mol of AyBO3. |
| 地址 |
Tokyo JP |
