| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride semiconductor laser device, wherein dispersion in the characteristics of the nitride semiconductor laser device can be reduced and the yield of nitride semiconductor laser devices can be improved. Ž<P>SOLUTION: The method of manufacturing the nitride semiconductor laser device includes: a step of forming a first conductive nitride semiconductor layer on a surface of a nitride semiconductor substrate having an inclination of an off angle θp in a first direction and an inclination of an off angle θv in a second direction forming an angle of 85° to 95° in the first direction; a step of forming an opening extending in a stripe and a current block layer on the surface of the first conductive nitride semiconductor layer; and a step of forming a first conductive nitride semiconductor-burying layer so as to coat the current block layer and bury the opening, wherein the opening is formed so as to extend to a direction making an angle of -5° to 5° in the first direction, the off angle θp is 0.05° to 1°, the off angle θv is ≤0.2°, and relation of θp>θv is satisfied. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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