| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device, which makes an occupied area small, and includes a capacitor having a sufficient charge storage area, furthermore suppresses a capacity between bit lines low. Ž<P>SOLUTION: The semiconductor device includes: a semiconductor substrate 1; a plurality of transistors 2 on the semiconductor substrate 1, in which adjoining sections share a source and drain region 3 and are arranged in series; an interlayer insulating film 4 formed on the semiconductor substrate 1 and the plurality of transistors 2; a capacitor bottom electrode 12 on the interlayer insulation film 4, which consists of a plurality of electrodes arranged in a row at a predetermined interval; a capacitor top electrode 10 on the capacitor bottom electrode 12, which consists of a plurality of electrodes arranged in a zigzag array of two rows at a predetermined interval through a capacitor insulating film 11; a capacitor contact 13 which connects one of the source and drain region 3 with the capacitor top electrode 10; and a capacitor contact 14 which connects other of the source and drain region 3 with the capacitor bottom electrode 12. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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