| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which modulate a carrier density and electric field in a carrier moving direction in a two-dimensional carrier gas channel generated, in a nitride-based semiconductor functional layer. SOLUTION: A semiconductor device (HEMT) 1 includes a nitride-based semiconductor functional layer 2, which has a second nitride-based semiconductor region 22 provided to a first nitride-based semiconductor region 21 in the form of a heterojunction and also has a two-dimensional carrier gas channel 23 in the vicinity of the heterojunction of the first nitride-based semiconductor region 21; first and second main electrodes 3, 4 provided on the second nitride-based semiconductor region 22 and separated from each other; and passivation films 10, provided on the second nitride-based semiconductor region 22 for applying respectively different stresses to a plurality of locations of the second nitride-based semiconductor region 22 between the first and second main electrodes 3 and 4. COPYRIGHT: (C)2010,JPO&INPIT |
