METHOD OF MANUFACTURING SEMICONDUCTOR SINGLE CRYSTAL BY CZOCHRALSKI TECHNOLOGY

摘要

PURPOSE: A method of manufacturing a semiconductor single crystal by a czochralski technology is provide to productivity of a single crystal by increasing a process margin and puling speed of flawless. CONSTITUTION: A crucible housing(20) supports an outer circumference of a crucible(10) as a specific form. A crucible rotating unit(30) rotates a crucible along with the crucible housing. A heating portion(40) is spaced from the side wall of the crucible housing by a predetermined interval and heats the crucible. An insulation part(50) prevents the leakage of heat generated from the heating portion to the outside. A crystal pulling part(60) pulls the single crystal from a silicon solution accommodated into the crucible. A heat shield part(70) reflects the heat emitted from a single crystal.